Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular-beam epitaxy
- 1 June 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (6) , 4457-4458
- https://doi.org/10.1063/1.326441
Abstract
Lattice deformation and misorientation of InxGa1−xAs epitaxial layers grown on InP substrates by molecular‐beam epitaxy is measured from rocking curves of an x‐ray double‐crystal monochrometer. It is concluded that the epitaxial layers are deformed from cubic to tetragonal and misoriented to the substrates except in lattice‐matched epilayers. This result suggests that the substrate lattice has a large influence on the structure of the epitaxial layers.This publication has 5 references indexed in Scilit:
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