Growth and crystallization of amorphous layers in silicon resulting from energetic ion bombardment
- 1 April 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 22 (4) , 520-523
- https://doi.org/10.1016/0168-583x(87)90153-4
Abstract
No abstract availableKeywords
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