Growth and Properties of Low-Resistivity n-Type ZnSe Crystals Grown from the Melt with Excess Zn under Argon Pressure
- 1 December 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (12A) , L941
- https://doi.org/10.1143/jjap.24.l941
Abstract
This paper describes a technique for growing low-resistivity n-type ZnSe crystals from the melt under pressure and the electrical and optical properties of the crystals. The low-resistivity ZnSe crystals are grown from the melt with excess Zn of 3 to 9.3 mol%. The resistivity of the crystals is of the order of 0.1 Ω·cm and the electron Hall mobility is 220 to 380 cm2/Vs. Near-band-edge emission is observed from the low-resistivity ZnSe crystals at room temperature in photoluminescence measurement.Keywords
This publication has 9 references indexed in Scilit:
- Blue light emission from ZnSe p-n junctionsJournal of Applied Physics, 1985
- Growth and Electrical Properties of Highly-Conductive As-Grown Zinc Selenide Crystals Grown from the MeltJapanese Journal of Applied Physics, 1981
- Near-band-edge photoluminescence in ZnSe grown from indium solutionJournal of Applied Physics, 1980
- Melt compositions of II–VI compounds during crystal growth in a high-pressure furnaceJournal of Crystal Growth, 1973
- Optical Properties of Substitutional Donors in ZnSePhysical Review B, 1972
- Techniques for Melt-Growth of Luminescent Semiconductor Crystals under PressureJournal of the Electrochemical Society, 1970
- Mobility of Electrons in ZnSe Prepared by Direct FusionJournal of the Physics Society Japan, 1967
- THE VAPOR PRESSURE OF ZINC SELENIDEThe Journal of Physical Chemistry, 1962
- Preparation and Properties of ZnS-Type Crystals from the MeltJournal of the Electrochemical Society, 1959