A key to room-temperature ferromagnetism in Fe-doped ZnO: Cu
Top Cited Papers
- 25 November 2002
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (22) , 4212-4214
- https://doi.org/10.1063/1.1525885
Abstract
Successful synthesis of room-temperature ferromagneticsemiconductors, Zn 1−x Fe x O , is reported. The essential ingredient in achieving room-temperature ferromagnetism in bulk Zn 1−x Fe x O was found to be additional Cudoping. A transition temperature as high as 550 K was obtained in Zn 0.94 Fe 0.05 Cu 0.01 O ; the saturation magnetization at room temperature reached a value of 0.75μ B per Fe. A large magnetoresistance was also observed below 100 K.Keywords
All Related Versions
This publication has 10 references indexed in Scilit:
- Room temperature ferromagnetic properties of (Ga, Mn)NApplied Physics Letters, 2001
- Spintronics: A Spin-Based Electronics Vision for the FutureScience, 2001
- Magnetic and electric properties of transition-metal-doped ZnO filmsApplied Physics Letters, 2001
- High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their propertiesApplied Physics Letters, 2001
- Room-Temperature Ferromagnetism in Transparent Transition Metal-Doped Titanium DioxideScience, 2001
- Room Temperature Ferromagnetism in Novel Diluted Magnetic Semiconductor Cd1-xMnxGeP2Japanese Journal of Applied Physics, 2000
- Material Design for Transparent Ferromagnets with ZnO-Based Magnetic SemiconductorsJapanese Journal of Applied Physics, 2000
- Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic SemiconductorsScience, 2000
- Properties of ferromagnetic III–V semiconductorsJournal of Magnetism and Magnetic Materials, 1999
- Diluted magnetic semiconductorsJournal of Applied Physics, 1988