Raman scattering study of alloyed Au-Ge ohmic contacts to GaAs

Publisher Website
Google Scholar
Abstract
Raman scattering was applied to study alloying of the Au-Ge-GaAs ohmic contact structure. The Ge layer was found to be amorphous as deposited, but transformed into polycrystalline Ge after alloying. Ge diffusion into the GaAs did not result in the formation of n+-GaAs. A broadband in the Raman spectra was found and attributed to electronic scattering by electrons in the GaAs trapped by deep levels formed by Ge and Au diffusion. These results were consistent with a model in which conduction through the contact occurred by resonant tunneling assisted by impurity levels in the graded Ge-GaAs heterojunction structure.

This publication has 2 references indexed in Scilit: