Impurity-induced-disordered phase modulators in AlGaAs/GaAs quantum well and double-heterostructure waveguides
- 29 August 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (9) , 728-730
- https://doi.org/10.1063/1.99816
Abstract
Results for two new channel waveguide phase modulators formed by impurity-induced disordering (IID) with Zn diffusion in AlGaAs/GaAs are presented. One device utilizes side diffusion into ridges of single quantum well material and the other utilizes surface diffusion into double-heterostructure material. Waveguide loss for both TE and TM polarizations, and effective index steps calculated from observed mode profiles are reported. TE/TM mode conversion was observed without bias under certain conditions. Initial results for phase modulation are in agreement with expectations and appear not to be affected by the IID.Keywords
This publication has 10 references indexed in Scilit:
- Analysis of depletion edge translation lightwave modulatorsJournal of Lightwave Technology, 1988
- Birefringent channel waveguides defined by impurity-induced superlattice disorderingApplied Physics Letters, 1988
- Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity-induced disorderingApplied Physics Letters, 1987
- Field effects on the refractive index and absorption coefficient in AlGaAs quantum well structures and their feasibility for electrooptic device applicationsIEEE Journal of Quantum Electronics, 1987
- Impurity-induced disorder-delineated optical waveguides in GaAs-AlGaAs superlatticesApplied Physics Letters, 1987
- Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disorderingApplied Physics Letters, 1986
- Simple and accurate loss measurement technique for semiconductor optical waveguidesElectronics Letters, 1985
- Stripe-geometry AlGaAs-GaAs quantum-well heterostructure lasers defined by impurity-induced layer disorderingApplied Physics Letters, 1984
- Absorption, refractive index, and birefringence of AlAs-GaAs monolayersJournal of Applied Physics, 1977
- Reflectivity of mode at facet and oscillation mode in double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972