Obtaining high etch rates of GaAs/Al0.3Ga0.7As using methane: hydrogen MORIE and organic photoresist masks
- 1 September 1989
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 4 (9) , 833-835
- https://doi.org/10.1088/0268-1242/4/9/022
Abstract
A process for high aspect ratio reactive ion etching of molecular beam epitaxially (MBE) grown GaAs and AlGaAs materials using a mixture of methane and hydrogen is described. The process utilises a positive photoresist which can withstand 7 mu m mesa etching of GaAs/Al0.3Ga0.7As and is simple to remove in acetone or oxygen plasmas. This eliminates the need for plasma-enhanced chemical vapour deposition (PECVD) mask technology.Keywords
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