The role of nonuniform dielectric permittivity in the determination of heterojunction band offsets by C–V profiling through isotype heterojunctions
- 31 October 1985
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 28 (10) , 1015-1017
- https://doi.org/10.1016/0038-1101(85)90032-2
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Determination of heterojunction band offsets by capacitance-voltage profiling through nonabrupt isotype heterojunctionsApplied Physics Letters, 1985
- Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As, N-n heterojunction by C-V profilingApplied Physics Letters, 1983
- On the theory of Debye averaging in the C-V profiling of semiconductorsSolid-State Electronics, 1981
- Measurement of isotype heterojunction barriers by C-V profilingApplied Physics Letters, 1980