Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells

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Abstract
The information on the variations of indium composition, aggregation size, and quantum-well width is crucially important for understanding the optical properties and, hence, fabricating efficient light-emitting devices. Our results showed that spinodal decomposition could occur in InGaN/GaN multiple quantum wells with indium content in the range of 15%–25% (grown with metal–organic chemical-vapor deposition). A lower nominal indium content led to a better confinement of indium-rich clusters within InGaNquantum wells. The InGaN/GaN interfaces became more diffusive, and indium-rich aggregates extended into GaN barriers with increasing indium content. It was also observed that indium-rich precipitates with diameter ranging from 5 to 12 nm preferred aggregating near V-shaped defects.