The feasibility of using trimethylamine alane as an Al precursor for MOMBE
- 2 February 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 109 (1-4) , 31-36
- https://doi.org/10.1016/0022-0248(91)90154-w
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
- Carbon incorporation in AlGaAs grown by CBEJournal of Crystal Growth, 1990
- CBE growth of AlGaAs/GaAs heterostructures and their device applicationsJournal of Crystal Growth, 1990
- Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alaneApplied Physics Letters, 1990
- GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBEElectronics Letters, 1990
- MOCVD of AlGaAs/GaAs with novel group III compoundsJournal of Electronic Materials, 1990
- Mechanism of surface selectivity in aluminum chemical vapor depositionJournal of Vacuum Science & Technology B, 1990
- Metallic p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxyJournal of Crystal Growth, 1989
- Ultrahigh doping of GaAs by carbon during metalorganic molecular beam epitaxyApplied Physics Letters, 1989