Shallow Junctions Formed by the Thermal Redistribution of Implanted Arsenic into TiSi2
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
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This publication has 1 reference indexed in Scilit:
- Silicided shallow junction formation by ion implantation of impurity ions into silicide layers and subsequent drive-inJournal of Applied Physics, 1987