A 29 GHz DRO in coplanar waveguide configuration with an AlGaAs HEMT
- 17 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- A nonlinear HEMT model for the design of frequency doubler and mixer circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1994
- A 36 ghz gaas oscillator with a mesfet in single side source grounded configurationAnnals of Telecommunications, 1992
- Equivalent-circuit parameter extraction for cold GaAs MESFET'sIEEE Transactions on Microwave Theory and Techniques, 1991
- Modular FET model with distributed source configuration for single and double side source grounded MESFETElectronics Letters, 1991
- High-frequency equivalent circuit of GaAs FETs for large-signal applicationsIEEE Transactions on Microwave Theory and Techniques, 1991
- Some Basic Characteristics of Broadband Negative Resistance Oscillator CircuitsBell System Technical Journal, 1969