High resolution studies on Hoechst AZ PN114 chemically amplified resist
- 31 January 1996
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 30 (1-4) , 327-330
- https://doi.org/10.1016/0167-9317(95)00256-1
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Submicro- and nanometer e-beam lithography and reactive ion etching with single layer chemically amplified negative resistMicroelectronic Engineering, 1994
- Characterization of AZ PN114 resist for high resolution using electron-beam and soft-x-ray projection lithographiesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- A JEOL 100 CXII converted for use as an electron-beam lithography systemJournal of Vacuum Science & Technology B, 1989