Electronic Polarizabilities of Transition Metal Ions and Rare-Earth Ions in II-VI Semiconductors

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Abstract
A theoretical estimate for the electronic polarizabilities αs of structural isoelectronic impurities such as transition metal ions and rare-earth ions in II-VI semiconductors has been made in the frame of Ruffa's second-order perturbation theory. The energy levels of the partly filled-inner shells of structural isoelectronic impurities are analyzed on the basis of the change of the effective Madelung energy and the ionization potential energy, which leads to the approximational estimates for αs. The estimated results are compared with some experimental data and found to be in good agreement.