An evaluation of contamination from plasma immersion ion implantation on silicon device characteristics
- 1 March 1994
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 23 (3) , 337-340
- https://doi.org/10.1007/bf02670644
Abstract
No abstract availableKeywords
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- Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal siliconPhysical Review Letters, 1986
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