Novel semiconductor substrate formed by hydrogen ion implantation into silicon

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Abstract
A high-resistivity layer formed beneath the silicon surface layer by using proton implantation and two-step annealing is described. Rapid thermal annealing with tungsten halogen lamps was carried out during the first annealing step and the time of the high-temperature treatment in the second annealing step was comparatively long. Experiments show that the quality of the top layer has been improved with the increase in surface Hall mobility of ∼25%. This novel semiconductor will likely be a new material for the manufacture of very high speed integrated circuits.

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