A study of secondary electron emission in insulators and semiconductors
- 1 July 1982
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (7) , 5239-5242
- https://doi.org/10.1063/1.331403
Abstract
The equation derived by G. F. Dionne [J. Appl. Phys. 44, 5361 (1973)], has been used as a basis for the present analysis. Escape probability has been determined for various insulators and semiconductors. The relative importance of the emission and production terms has been discussed in various energy gap-width regions. The role of electron affinity is also discussed. Values for the escape probabilities and the mean free paths of secondaries are given.This publication has 14 references indexed in Scilit:
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