Non-contact mapping of heavy metal contamination for silicon IC fabrication
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A185-A192
- https://doi.org/10.1088/0268-1242/7/1a/036
Abstract
The authors present the principles and application examples of a recently refined, computerised, surface photovoltage (SPV) method. This new method is capable of wafer-scale, non-contact mapping of metal contaminants in the bulk and on the surface with sensitivities as high at 1010 atoms cm-3. They demonstrate the unique ability of SPV to measure product wafers with finished integrated circuits.Keywords
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