Non-contact deep level transient spectroscopy (DLTS) based on surface photovoltage
- 1 January 1992
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 7 (1A) , A211-A214
- https://doi.org/10.1088/0268-1242/7/1a/041
Abstract
The authors present results of non-contact, wafer-scale measurement of the deep level thermal emission realised in GaAs on a native surface barrier using surface photovoltage (SPV) transients. The principle of corresponding optical deep level transient spectroscopy (DLTS) is discussed and the approach is applied to non-contact wafer mapping.Keywords
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