An experimental determination of the forward-biased emitter-base capacitance
- 1 June 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6) , 833-836
- https://doi.org/10.1016/0038-1101(78)90307-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Transistor input parameter variations indicating high-gain frequency multiplication propertiesProceedings of the IEEE, 1972
- Transition region capacitance of diffused p-n junctionsIEEE Transactions on Electron Devices, 1971
- Modeling of emitter capacitanceProceedings of the IEEE, 1969