96 W AlGaN/GaN heterojunction FET with field-modulating plate
- 2 October 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (20) , 1474-1475
- https://doi.org/10.1049/el:20030947
Abstract
An AlGaN/GaN heterojunction FET with a field-modulating plate has been successfully fabricated. A maximum drain current of 900 mA/mm was obtained with a gate–drain breakdown voltage of over 150 V. A 24 mm-wide FET exhibited 96 W (4.0 W/mm) output power, 54% power-added efficiency and 8.5 dB linear gain at a drain bias of 32 V.Keywords
This publication has 1 reference indexed in Scilit:
- AlGaN/GaN HEMTs-an overview of device operation and applicationsProceedings of the IEEE, 2002