Yellow emission (573.5 nm) Ga 0.65 In 0.35 Plasers grown on GaAs 0.6 P 0.4 substrates by gas source molecular beam epitaxy
- 24 November 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (24) , 2049-2050
- https://doi.org/10.1049/el:19941399
Abstract
The first current injection lasing action in AlGaInP/Ga0.65In0.35P heterostructures grown on commercially available GaAs0.6P0.4 substrates is reported. At 77 K, laser diodes exhibited threshold current densities of 900 A/cm2 with yellow stimulated emission near 5735 Å. This is the shortest current injection lasing wavelength ever achieved in a III-V compound semiconductor.Keywords
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