Accounting for experimentally observed transients in simulation of partially-depleted SOI MOSFET's

Publisher Website

19 November 2002

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/soi.1995.526433

Abstract

No abstract available

Keywords

This publication has 3 references indexed in Scilit:

Minimizing floating-body-induced threshold voltage variation in partially depleted SOI CMOS
IEEE Electron Device Letters, 1996
Numerical analysis of switching characteristics in SOI MOSFET's
IEEE Transactions on Electron Devices, 1986
VB-6 Charge-based large-signal modeling of thin-film SOI MOSFET's
IEEE Transactions on Electron Devices, 1984