High-contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode
- 23 September 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (13) , 1523-1525
- https://doi.org/10.1063/1.106270
Abstract
The realization at room temperature of a high contrast ratio (20:1) and an on-state reflectivity of 46.5% in an optically bistable switch involving strained InGaAs/GaAs (100) multiple-quantum-well-based asymmetric Fabry–Perot reflection modulator, detector, and InGaAs/AlAs-based resonant tunneling diode and an Si field-effect transistor is reported.Keywords
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