A novel optical bistability device consisting of resonant tunneling diode and quantum stark modulator: Experimental demonstration
- 1 April 1990
- journal article
- Published by Elsevier in Surface Science
- Vol. 228 (1-3) , 468-471
- https://doi.org/10.1016/0039-6028(90)90354-b
Abstract
No abstract availableFunding Information
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 10 references indexed in Scilit:
- Symmetric self-electro-optic effect device: Optical set-reset latchApplied Physics Letters, 1988
- Novel quantum-well optical bistability device with excellent on/off ratio and high speed capabilityElectronics Letters, 1988
- Self-electro-optic effect device and modulation convertor with InGaAs/InP multiple quantum wellsApplied Physics Letters, 1988
- Dependence of resonant tunneling current on Al mole fractions in AlxGa1−xAs-GaAs-AlxGa1−xAs double barrier structuresApplied Physics Letters, 1987
- Dependence of resonant tunneling current on well widths in AlAs/GaAs/AlAs double barrier diode structuresApplied Physics Letters, 1986
- Precise Control of Resonant Tunneling Current in AlAs/GaAs/AlAs Double Barrier Diodes with Atomically-Controlled Barrier WidthsJapanese Journal of Applied Physics, 1986
- Fabrication of arrays of GaAs optical bistable devicesApplied Physics Letters, 1986
- The quantum well self-electrooptic effect device: Optoelectronic bistability and oscillation, and self-linearized modulationIEEE Journal of Quantum Electronics, 1985
- Electric field dependence of optical absorption near the band gap of quantum-well structuresPhysical Review B, 1985
- Room-temperature excitonic optical bistability in a GaAs-GaAlAs superlattice étalonApplied Physics Letters, 1982