Kinetics of recrystallization in ion-implanted silicon layers
- 16 May 1976
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 35 (1) , 109-112
- https://doi.org/10.1002/pssa.2210350112
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- Ion-implantation doping of semiconductorsJournal of Materials Science, 1967
- Struktur des amorphen Germaniums und SiliciumsZeitschrift für Naturforschung A, 1958