Selectivity in high-temperature operated semiconductor gas-sensors
- 1 September 1998
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 52 (1-2) , 179-187
- https://doi.org/10.1016/s0925-4005(98)00271-8
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Charge transfer reactions on semiconductor surfacesPublished by Springer Nature ,2008
- Fast gas sensors based on metal oxides which are stable at high temperaturesSensors and Actuators B: Chemical, 1997
- Fabrication of a hybrid field-effect structure for gas detection with diverse sensitive materialsSensors and Actuators B: Chemical, 1994
- Characterization and crystallite growth of semiconducting high-temperature-stable Ga2O3 thin filmsJournal of Materials Science Letters, 1992
- Sensing reducing gases at high temperatures using long-term stable Ga2O3 thin filmsSensors and Actuators B: Chemical, 1992
- Gallium oxide thin films: A new material for high-temperature oxygen sensorsSensors and Actuators B: Chemical, 1991
- Surface processes in the detection of reducing gases with SnO2-based devicesSensors and Actuators, 1989
- Effects of additives on semiconductor gas sensorsSensors and Actuators, 1983
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- A New Detector for Gaseous Components Using Semiconductive Thin Films.Analytical Chemistry, 1962