Pressure-induced intra-4f luminescence in GaAs:Er,O
- 7 July 1997
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (1) , 93-95
- https://doi.org/10.1063/1.119479
Abstract
In metalorganic chemical vapor deposition grown GaAs:Er,O samples, at ambient pressure, only the ErGa−2O center is excited by above band gap host photoexcitation (host excitation) and shows a sharp infrared luminescence spectra due to intra-4f transitions in the Er3+ ion. It is found, at high pressure, that at least two other Er centers become optically active by host excitation. One of these pressure-induced centers is assigned to a specific Er center having slightly different atomic configuration than the ErGa−2O center by comparing the pressure-induced photoluminescence (PL) spectra with the site-selective PL spectra.Keywords
This publication has 4 references indexed in Scilit:
- Photoluminescence analysis of Er-doped GaAs under host photoexcitation and direct intra-4f-shell photoexcitationJournal of Applied Physics, 1995
- Multiphonon-assisted energy transfer between Yb 4f shell and InP hostJournal of Applied Physics, 1994
- Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen CodopingJapanese Journal of Applied Physics, 1994
- Pressure-Induced Recovery of the 4f-Shell Luminescence of Yb Doped in InP at Near Room TemperatureMaterials Science Forum, 1993