Efficient Er Luminescence Centers Formed in GaAs by Metalorganic Chemical Vapor Deposition with Oxygen Codoping
- 1 January 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (1S)
- https://doi.org/10.1143/jjap.33.709
Abstract
Er-doped GaAs is grown by low-pressure metalorganic chemical vapor deposition with and without oxygen codoping. Optically efficient Er-oxygen complex centers are formed when a small amount of oxygen is present in the growth atmosphere. In situ monitoring of the surface morphology by light scattering from the growing surface with and without oxygen codoping suggests that migration of Er atoms on the surface is pinned by the formation of an Er-oxygen complex. We speculate that this effect suppresses the formation of Er-rich clusters and allows the formation of a high concentration of uniformly dispersed Er-oxygen complex centers that have a high luminescence efficiency.Keywords
This publication has 4 references indexed in Scilit:
- Selective formation of an efficient Er-O luminescence center in GaAs by metalorganic chemical vapor deposition under an atmosphere containing oxygenJournal of Applied Physics, 1993
- Growth and structural characterization of molecular beam epitaxial erbium-doped GaAsJournal of Crystal Growth, 1992
- Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InPJournal of Crystal Growth, 1987
- Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxyJournal of Applied Physics, 1987