Photoluminescence excitation measurements on GaAs:Er grown by molecular-beam epitaxy
- 15 May 1987
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 61 (10) , 4877-4879
- https://doi.org/10.1063/1.338353
Abstract
Using a tunable color center laser, photoluminescence excitation measurements were performed on GaAs:Er grown by molecular‐beam epitaxy. These measurements show that only one type of Er3+ center is responsible for the sharply structured emission band at 1.54 μm. The multiplicity of the zero‐phonon lines indicates that this Er3+ center has lower than cubic symmetry and that the luminescence arises from the intracenter transition 4I13/2→4I15/2 of Er3+ (4f 11).This publication has 13 references indexed in Scilit:
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