The Structure and Electrical Properties of Au Contacts to GaAs
- 1 January 1985
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Reactions of Pd on (100) and (110) GaAs surfacesJournal of Applied Physics, 1985
- Annealing of intimate Ag, Al, and Au–GaAs Schottky barriersJournal of Vacuum Science & Technology A, 1985
- Crystallographic relationships between GaAs, As and Ga2O3 at the GaAs-thermal oxide interfaceMaterials Letters, 1985
- Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal filmsJournal of Applied Physics, 1985
- Metallic and atomic approximations at the Schottky barrier interfacesJournal of Vacuum Science & Technology B, 1984
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compoundsThin Solid Films, 1982
- Unified defect model and beyondJournal of Vacuum Science and Technology, 1980
- Barrier Height Studies on Metal-Semiconductor SystemsJournal of Applied Physics, 1963
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942