Synthesis of CuO films using mass-separated, low-energy O+ ion beams
- 25 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (21) , 2684-2685
- https://doi.org/10.1063/1.106895
Abstract
For the first time, CuO thin films have been synthesized by means of low‐energy and high‐density O+‐ion beams, mass separated from an oxygen plasma. A 50‐eV, 47‐μA/cm2 O+‐ion beam has successfully produced CuO at a growth rate of 0.04 Å/s by simultaneous deposition of Cu metal on MgO(100). O+ beams have greater potential for oxidation than O2 gas from the viewpoint of the flux necessary to form CuO.Keywords
This publication has 7 references indexed in Scilit:
- Role of atomic oxygen produced by an electron cyclotron resonance plasma in the oxidation of YBa2Cu3O7−x thin films studied by i n s i t u resistivity measurementApplied Physics Letters, 1990
- Molecular beam epitaxial growth of layered Bi-Sr-Ca-Cu-O compoundsJournal of Crystal Growth, 1990
- Thin Film Growth of YBa2Cu3O7-x by ECR Oxygen Plasma Assisted Reactive EvaporationJapanese Journal of Applied Physics, 1989
- In situ growth of superconducting YBaCuO using reactive electron-beam coevaporationIEEE Transactions on Magnetics, 1989
- A Molecular and Ion-Beam Epitaxy System for the Growth of III-V Compound Semiconductors Using a Mass-Separated, Low-Energy Group-V Ion BeamJapanese Journal of Applied Physics, 1985
- Oxidation of lead by low energy O2+ bombardmentSurface Science, 1972
- A new ion source for electromagnetic isotope separatorsNuclear Instruments and Methods, 1963