The influences of carbon, hydrogen and nitrogen on the floating zone growth of four inch silicon crystals
- 31 January 1996
- journal article
- Published by Elsevier in Materials Science and Engineering B
- Vol. 36 (1) , 209-212
- https://doi.org/10.1016/0921-5107(95)01287-7
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Nitrogen doping during growth of dislocation-free FZ silicon crystalsCrystal Research and Technology, 1987
- The nature and formation mechanism of anomalous defects in dislocation free FZ-silicon crystals caused by hydrogen dopingPhysica Status Solidi (a), 1982
- The formation of swirl defects in silicon by agglomeration of self-interstitialsJournal of Crystal Growth, 1977
- The introduction of dislocations during the growth of floating-zone silicon crystals as a result of point defect condensationJournal of Crystal Growth, 1975