Relationships between the nonradiative multiphonon carrier‐capture properties of deep charged and neutral centres in semiconductors

This publication has 21 references indexed in Scilit:

• Calculation of Nonradiative Multiphonon Capture Coefficients and Ionization Rates for Neutral Centres According to the Static Coupling Scheme II. Alternative Trap Models
  Physica Status Solidi (b), 1976
• Calculation of nonradiative multiphonon capture coefficients and ionization rates for neutral centres according to the static coupling scheme: I. Theory
  Physica Status Solidi (b), 1975
• Description of nonradiative multiphonon transitions in the static coupling scheme II. Approximations
  Czechoslovak Journal of Physics, 1975
• Quantum-Efficiency of Multiphonon Transitions According to the Static Coupling Scheme
  Physica Status Solidi (b), 1974
• Description of nonradiative multiphonon transitions in the static coupling scheme
  Czechoslovak Journal of Physics, 1974
• Non‐Radiative Transitions in Semiconductors
  Physica Status Solidi (b), 1970
• Calculation of Nonradiative Electron Transition Rates in a Lattice-Localized-Electron System
  Physical Review B, 1969
• Recombination Mechanisms
  Physica Status Solidi (b), 1968
• On the theory of the thermal capture of electrons in semi-conductors
  Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
• Statistics of the Recombinations of Holes and Electrons
  Physical Review B, 1952