Properties of luminescent GaAs p-n junctions with alloyed p-region
- 1 February 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (2) , 123-126
- https://doi.org/10.1016/0038-1098(67)90008-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Optical properties of GaAs alloyed p-n junctionsSolid State Communications, 1967
- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966
- Characteristics of a GaAs spontaneous infrared source with 40 percent efficiencyIEEE Transactions on Electron Devices, 1965
- Luminescence and Recombination through Defects inJunctionsPhysical Review B, 1965
- Properties of GaAs alloy diodesSolid-State Electronics, 1963
- RECOMBINATION RADIATION IN GaAs BY OPTICAL AND ELECTRICAL INJECTIONApplied Physics Letters, 1962