Optical properties of GaAs alloyed p-n junctions
- 28 February 1967
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 5 (2) , 127-130
- https://doi.org/10.1016/0038-1098(67)90009-9
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Impurity-Band Tails in the High-Density Limit. I. Minimum Counting MethodsPhysical Review B, 1966
- Edge absorption and photoluminescence in closely compensated GaAsSolid State Communications, 1965
- Polarity Effects in InSb Alloyed p-n JunctionsJournal of Applied Physics, 1965
- Optical Generation Spectrum for the Electron Thermal-Injection Mechanism in GaAs DiodesJournal of Applied Physics, 1964
- Recombination radiation and stimulated emission in GaAsSolid-State Electronics, 1963
- Tunneling Current Density as a Function of Crystallographic PolarityJournal of Applied Physics, 1963