Polarized hot-electron photoluminescence in highly doped GaAs

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Abstract
The luminescence polarization is calculated for circularly polarized hot-electron photoluminescence in highly p-doped GaAs. Good overall qualitative agreement with experiments is found. Particular emphasis is put on the explanation of the polarization minimum and its dependence on excitation energy. We find that it is due to excitation of electrons from the light-hole band to the conduction band followed by the recombination with holes in the heavy-hole band, both processes being vertical. We determine the energy position of the minimum as a function of excitation energy, and find good quantitative agreement with experiments. The change in energy dispersions for the conduction and valence bands due to the doping is taken into account in all steps of the calculation.