Effect of pressure differential on channeling in thin Si crystals
- 1 May 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (9) , 804-806
- https://doi.org/10.1063/1.94101
Abstract
The effect on ion channeling in thin Si single crystals of distortion produced by a pressure differential has been investigated. At a threshold pressure of several Torr in a Si-air cell, an abrupt increase occurs in the channeling minimum yield. Measurements have been made of the distortion using reflection of laser light, which produces an unusual interference pattern. A geometric model is proposed in which the minimum yield is determined by the tilting of the channels perpendicular to the bowed crystal surface.Keywords
This publication has 6 references indexed in Scilit:
- Silicon as a mechanical materialProceedings of the IEEE, 1982
- Laser-induced diffraction rings from a nematic-liquid-crystal filmOptics Letters, 1981
- Preparation of large-area monocrystalline silicon thin windowsReview of Scientific Instruments, 1980
- Waves and Thom's theoremAdvances in Physics, 1976
- Cusped rainbows and incoherence effects in the rippling-mirror model for particle scattering from surfacesJournal of Physics A: General Physics, 1975
- Characterization of polycrystalline layers by channelling measurementsThin Solid Films, 1973