Preparation of large-area monocrystalline silicon thin windows
- 1 September 1980
- journal article
- conference paper
- Published by AIP Publishing in Review of Scientific Instruments
- Vol. 51 (9) , 1212-1216
- https://doi.org/10.1063/1.1136404
Abstract
A procedure suitable for laboratory practice is described to prepare large‐area self‐supporting silicon thin crystals with (100), (110) and (111) orientations. Windows up to 2 cm in diameter and 2000 Å in thickness can be produced. Variation in the thickness across the sample can be as low as ±60 Å as measured by 4He+ backscattering spectrometry.Keywords
This publication has 13 references indexed in Scilit:
- Studies of the Si-SiO2 interface by MeV ion channelingApplied Physics Letters, 1979
- Sodium Hydroxide Solution Shows Selective Etching of Boron‐Doped SiliconJournal of the Electrochemical Society, 1979
- Use of Thin Si Crystals in Backscattering-Channeling Studies of the Si-SiInterfacePhysical Review Letters, 1978
- Preparation of thin windows in silicon masks for x-ray lithographyJournal of Applied Physics, 1975
- Channeling and related effects in the motion of charged particles through crystalsReviews of Modern Physics, 1974
- Preparation of supported, large-area, uniformly thin silicon films for particle-channeling studiesNuclear Instruments and Methods, 1971
- Ethylene Diamine-Pyrocatechol-Water Mixture Shows Etching Anomaly in Boron-Doped SiliconJournal of the Electrochemical Society, 1971
- Ethylene Diamine-Catechol-Water Mixture Shows Preferential Etching of p-n JunctionJournal of the Electrochemical Society, 1969
- A Water-Amine-Complexing Agent System for Etching SiliconJournal of the Electrochemical Society, 1967
- Densitometric and Electrical Investigation of Boron in SiliconPhysical Review B, 1955