Accurate nonlinear transistor modeling using pulsed S parameters measurements under pulsed bias conditions
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableThis publication has 2 references indexed in Scilit:
- Accurate nonlinear modeling and verification of MMIC amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A Fully Automated On-Wafer Pulsed Measurement System, with Variable Pulse-Length and Duty Cycle, for Accurate Large Signal FET ModelingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1989