MOS noise performance under impedance matchingconstraints
- 22 July 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (15) , 1278-1280
- https://doi.org/10.1049/el:19990837
Abstract
MOS noise performance under source matching constraints is analysed for an improved impedance matching scheme, using both classical and non-quasistatic noise models. The tradeoff between achieving a low noise figure and a high power gain when preserving a source match is investigated and clarifiedKeywords
This publication has 1 reference indexed in Scilit:
- Optimum MOS power matching by exploiting non-quasistaticeffectElectronics Letters, 1999