Time-resolved measurements on2T2→2Ephotoluminescence ofTi3+in GaP

The time dependence of the ${}_{}{}^2{}_{}{}^{}$ ${\mathit{T}}_2$ ${\to }^2$E photoluminescence transition of ${\mathrm{Ti}}_{\mathrm{Ga}}^{3+}$ in GaP has been measured on semi-insulating, p-type conducting, and n-type conducting samples. A decay time ${\mathrm{\tau }}_0$=2.0 μs was obtained at T=10 K. The temperature dependence of the decay time in the conducting samples is found to be affected by the capture of free carriers by ${\mathrm{Ti}}_{\mathrm{Ga}}^{3+}$ in the excited state whereas the results on p-type conducting samples suggest hole localization at the ${\mathrm{Ti}}_{\mathrm{Ga}}^{3+}$.