GaAs-AlxGa1−xAs strip-buried-heterostructure lasers with lateral-evanescent-field distributed feedback
- 1 June 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (11) , 752-755
- https://doi.org/10.1063/1.90661
Abstract
A GaAs‐AlxGa1−xAs strip‐buried‐heterostructure laser with distributed feedback provided through lateral‐evanescent‐field‐grating interaction is demonstrated. The diode is shown to operate stably in single transverse (fundamental) and longitudinal modes up to about 3×Ith over a temperature range 0–36 °C under pulsed operation. The light‐current characteristics of these lasers exhibit the characteristic linearity of conventional strip‐buried heterostructure lasers.Keywords
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