Compensation of GaAs by Oxygen Implantation
- 1 January 1973
- book chapter
- Published by Springer Nature
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- A semi-insulated gate gallium-arsenide field-effect transistorIEEE Transactions on Electron Devices, 1972
- Isolation of junction devices in GaAs using proton bombardmentSolid-State Electronics, 1969
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Die Änderung von Konzentration und Beweglichkeit der Ladungsträger in GaAs bei Bestrahlung mit ProtonenZeitschrift für Naturforschung A, 1966