Effects of deuterium plasmas on silicon near-surface properties
- 15 April 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (8) , 3297-3300
- https://doi.org/10.1063/1.342666
Abstract
The effects of reactive-ion etching and plasma etching (using deuterium) on the electrical properties of silicon have been studied employing capacitance-voltage measurements of Schottky diodes and secondary ion mass spectrometry. Both significant hydrogen penetration, which causes electrical deactivation of the boron dopant, and radiation damage result from the plasma exposure. A model is suggested to explain our results.This publication has 16 references indexed in Scilit:
- Hydrogen plasma induced defects in siliconApplied Physics Letters, 1988
- Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work functionJournal of Applied Physics, 1988
- Reactive ion etching related Si surface residues and subsurface damage: Their relationship to fundamental etching mechanismsJournal of Vacuum Science & Technology A, 1987
- Hydrogen in crystalline semiconductorsApplied Physics A, 1987
- Microstructural studies of reactive ion etched siliconApplied Physics Letters, 1987
- Field drift of the hydrogen-related, acceptor-neutralizing defect in diodes from hydrogenated siliconApplied Physics Letters, 1985
- Near‐Surface Damage and Contamination after CF 4 / H 2 Reactive Ion Etching of SiJournal of the Electrochemical Society, 1985
- Study of silicon contamination and near-surface damage caused by CF4/H2 reactive ion etchingApplied Physics Letters, 1984
- Neutralization of Shallow Acceptor Levels in Silicon by Atomic HydrogenPhysical Review Letters, 1983
- Deactivation of the boron acceptor in silicon by hydrogenApplied Physics Letters, 1983