Novel technique for determining bias, temperature and frequency dependence of FET characteristics

25 June 2003

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 993-996 vol.2
https://doi.org/10.1109/mwsym.2002.1011796

Abstract

A novel measurement of the dynamics of HEMT and MESFET behavior permits classification of dispersion effects and identifies operating regions that they affect. This reveals a simple structure to the otherwise complicated dynamic behavior that has concerned circuit designers. With this insight, it is possible to predict biases, temperatures and frequencies that dispersion will or will not affect. It is interesting to note that, for some devices, dispersion effects can be seen to exist at microwave frequencies and may therefore contribute to intermodulation distortion.

Keywords

This publication has 5 references indexed in Scilit:

Relating Dynamics of FET Behavior to Operating Regions
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2001
Measurement and characterization of HEMT dynamics
IEEE Transactions on Microwave Theory and Techniques, 2001
A physical model for the kink effect in InAlAs/InGaAs HEMTs
IEEE Transactions on Electron Devices, 2000
Impact ionization in InAlAs/InGaAs/InAlAs HEMT's
IEEE Electron Device Letters, 2000
Pulsed device measurements and applications
IEEE Transactions on Microwave Theory and Techniques, 1996