Green electroluminescence from Er-doped GaN Schottky barrier diodes
- 26 October 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (17) , 2450-2452
- https://doi.org/10.1063/1.122478
Abstract
Visible light electroluminescence (EL) has been obtained from Er-doped GaN Schottky barrier diodes. The GaN was grown by molecular beam epitaxy on Si substrates using solid sources (for Ga, and Er) and a plasma source for N2. Al was utilized for both the Schottky (small-area) and ground (large-area) electrodes. Strong green light emission was observed under reverse bias, with weaker emission present under forward bias. The emission spectrum consists of two narrow green lines at 537 and 558 nm and minor peaks at 413 and at 666/672 nm. The green emission lines have been identified as Er transitions from the H11/22 and S3/24 levels to the I15/24 ground state and the blue and red peaks as the H9/22 and F9/24 Er transitions to the same ground state. The reverse bias EL intensity was found to increase linearly with bias current.Keywords
This publication has 14 references indexed in Scilit:
- Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaNJournal of Applied Physics, 1997
- Luminescence properties of erbium in III–V compound semiconductorsSolid-State Electronics, 1995
- Erbium in oxygen-doped silicon: ElectroluminescenceJournal of Applied Physics, 1995
- Electroluminescence from Er-doped GaPApplied Physics Letters, 1994
- Studies of GaAs:Er impact excited electroluminescence devicesApplied Physics Letters, 1994
- Room-temperature sharp line electroluminescence at λ=1.54 μm from an erbium-doped, silicon light-emitting diodeApplied Physics Letters, 1994
- Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materialsElectronics Letters, 1989
- 1.54-μm electroluminescence of erbium-doped silicon grown by molecular beam epitaxyApplied Physics Letters, 1985
- Electroluminescence of ZnSe:ErF3 thin filmsJournal of Luminescence, 1981
- A comparison of the photoluminescent and electroluminescent spectra of Er3+in ZnSeJournal of Physics C: Solid State Physics, 1971