Solid-phase epitaxial regrowth of ion-implanted layers in GaAs
- 15 October 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (8) , 598-600
- https://doi.org/10.1063/1.92816
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Epitaxial regrowth of thin amorphous GaAs layersApplied Physics Letters, 1981
- Silver recoil yield resulting from krypton implantationJournal of Applied Physics, 1981
- An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targetsJournal of Applied Physics, 1980
- Low-temperature epitaxial regrowth of ion-implanted amorphous GaAsApplied Physics Letters, 1980
- Substrate-orientation dependence of the epitaxial regrowth rate from Si-implanted amorphous SiJournal of Applied Physics, 1978
- Reordering of implanted amorphous layers in gaasRadiation Effects, 1977