Above-threshold analysis of double-heterostructure diode lasers with laterally tapered active regions

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Abstract
An above-threshold analysis of double-heterostructure lasers with laterally tapered active regions is presented. Results for lowest-order mode threshold, differential quantum efficiency, and higher-order transverse-mode threshold are shown to compare well with experimental observations. A design is presented for a 40-mA-threshold laser (275 μm in length) predicted to operate kink free, single transverse mode at ≈50% differential quantum efficiency up to ≈40 mW.