Films of Ni-7 at% V, Pd, Pt and Ta-Si-N as diffusion barriers for copper on
- 7 October 1998
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 31 (19) , 2406-2411
- https://doi.org/10.1088/0022-3727/31/19/007
Abstract
Films of Ni-7 at% V, Pt, Pd, and , each approximately 100 nm thick, were magnetron-deposited and interposed between about 250 nm thick copper overlayers and single-crystalline substrates. The samples were then annealed in vacuum up to C. The performance of the metal and the tantalum-silicon-nitride films as diffusion barriers for in-diffusion of Cu and out-diffusion of Bi and Te was evaluated by 2.0 MeV backscattering spectrometry and x-ray diffraction. The Ni-7 at% V, Pd and Pt films all fail to prevent interdiffusion of Cu and after a few hours of annealing at C. However, the barrier preserves the integrity of the contact after C for 50 h and C for 1 h anneals. These results confirm the superior characteristics of the metal-silicon-nitride films as diffusion barriers.Keywords
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